STMicroelectronicsSTGW30NC60KDIGBT-Chip
Trans IGBT Chip N-CH 600V 60A 200W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 2.1 | |
| 60 | |
| 0.1 | |
| 200 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) mm |
| Verpackungsbreite | 5.15(Max) mm |
| Verpackungslänge | 15.75(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You can use this STGW30NC60KD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.