STMicroelectronicsSTGW38IH130DIGBT-Chip
Trans IGBT Chip N-CH 1300V 63A 250W 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±25 | |
| 1300 | |
| 2.1 | |
| 63 | |
| 0.1 | |
| 250 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) mm |
| Verpackungsbreite | 5.15(Max) mm |
| Verpackungslänge | 15.75(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the STGW38IH130D IGBT transistor from STMicroelectronics. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 1300 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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