STMicroelectronicsSTGWT30H65FBIGBT-Chip
Trans IGBT Chip N-CH 650V 60A 260W 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.55 | |
| 60 | |
| 0.25 | |
| 260 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 18.7 |
| Verpackungsbreite | 4.8 |
| Verpackungslänge | 15.6 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3P |
| 3 | |
| Leitungsform | Through Hole |
Don't be afraid to step up the amps in your device when using this STGWT30H65FB IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 260000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
| EDA / CAD Models |
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