STMicroelectronicsSTGY50NC60WDIGBT-Chip
Trans IGBT Chip N-CH 600V 110A 278W 3-Pin(3+Tab) Max247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 2.1 | |
| 110 | |
| 0.1 | |
| 278 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.3(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 15.9(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | Max247 |
| 3 |
You can use this STGY50NC60WD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 278000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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