STMicroelectronicsSTH320N4F6-2MOSFETs
Trans MOSFET N-CH 40V 200A 3-Pin(2+Tab) H2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 200 | |
| 100 | |
| 1 | |
| 1.3@10V | |
| 240@10V | |
| 240 | |
| 13800@15V | |
| 340000 | |
| 95 | |
| 98 | |
| 190 | |
| 28 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.8(Max) |
| Verpackungsbreite | 9.17(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Lieferantenverpackung | H2PAK |
| 3 | |
| Leitungsform | Gull-wing |
This STH320N4F6-2 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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