STMicroelectronicsSTL15N60M2-EPMOSFETs
Trans MOSFET N-CH 600V 7A 8-Pin Power Flat EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4.75 | |
| 7 | |
| 10000 | |
| 1 | |
| 418@10V | |
| 17@10V | |
| 17 | |
| 590@100V | |
| 55000 | |
| 15 | |
| 10 | |
| 40 | |
| 11 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Power Flat EP |
| 8 | |
| Leitungsform | No Lead |
Compared to traditional transistors, STL15N60M2-EP power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 55000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes mdmesh m2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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