STMicroelectronicsSTL26NM60NMOSFETs
Trans MOSFET N-CH Si 600V 19A 4-Pin Power Flat EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 19 | |
| 185@10V | |
| 60@10V | |
| 60 | |
| 1800@50V | |
| 125000 | |
| 50 | |
| 25 | |
| 85 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.88 |
| Verpackungsbreite | 8 |
| Verpackungslänge | 8 |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | Power Flat EP |
| 4 | |
| Leitungsform | No Lead |
This STL26NM60N power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh ii technology.
| EDA / CAD Models |
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