STMicroelectronicsSTL9N60M2MOSFETs
Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 4.8 | |
| 10000 | |
| 1 | |
| 860@10V | |
| 10@10V | |
| 10 | |
| 320@100V | |
| 48000 | |
| 13.5 | |
| 7.5 | |
| 22 | |
| 8.8 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Power Flat EP |
| 8 | |
| Leitungsform | No Lead |
Create an effective common drain amplifier using this STL9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with mdmesh ii technology.
| EDA / CAD Models |
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