STMicroelectronicsSTP13NM60NDMOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 5 | |
| 11 | |
| 100 | |
| 1 | |
| 380@10V | |
| 24.5@10V | |
| 24.5 | |
| 845@50V | |
| 109000 | |
| 15.4 | |
| 10 | |
| 9.6 | |
| 46.5 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) |
| Verpackungsbreite | 4.6(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this STP13NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 109000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.