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STMicroelectronicsSTP80NF10MOSFETs
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 80 | |
| 100 | |
| 0.5 | |
| 15@10V | |
| 135@10V | |
| 135 | |
| 51.3 | |
| 23 | |
| 450 | |
| 5500@25V | |
| 175@25V | |
| 2 | |
| 700 | |
| 300000 | |
| 60 | |
| 80 | |
| 116 | |
| 26 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| 320 | |
| 106 | |
| 1.3 | |
| 3 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.15(Max) mm |
| Verpackungsbreite | 4.6(Max) mm |
| Verpackungslänge | 10.4(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, STP80NF10 power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes stripfet ii technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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