| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 450 | |
| ±30 | |
| 0.5 | |
| 4500@10V | |
| 7@10V | |
| 7 | |
| 160@25V | |
| 3100 | |
| 12 | |
| 4 | |
| 6.7 | |
| -65 | |
| 150 | |
| Industrial | |
| Ammo | |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.95(Max) |
| Verpackungsbreite | 3.94(Max) |
| Verpackungslänge | 4.95(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Formed |
If you need to either amplify or switch between signals in your design, then STMicroelectronics' STQ1NC45R-AP power MOSFET is for you. Its maximum power dissipation is 3100 mW. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.