STMicroelectronicsSTQ1NK80ZR-APMOSFETs
Trans MOSFET N-CH 800V 0.25A 3-Pin TO-92 Ammo
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 0.25 | |
| 16000@10V | |
| 7.7@10V | |
| 7.7 | |
| 160@25V | |
| 2500 | |
| 28 | |
| 23 | |
| 18 | |
| 7 | |
| -55 | |
| 150 | |
| Industrial | |
| Ammo | |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.95(Max) |
| Verpackungsbreite | 3.94(Max) |
| Verpackungslänge | 4.95(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Formed |
As an alternative to traditional transistors, the STQ1NK80ZR-AP power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
| EDA / CAD Models |
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