| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.7(Min) | |
| 2.3 | |
| 100 | |
| 1 | |
| 30@4.5V | |
| 4.6@4.5V | |
| 367@16V | |
| 350 | |
| 4 | |
| 14.4 | |
| 17 | |
| 4.8 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this STR2N2VH5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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