STMicroelectronicsSTW69N65M5-4MOSFETs
Trans MOSFET N-CH Si 650V 58A 4-Pin(4+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±25 | |
| 5 | |
| 58 | |
| 100 | |
| 1 | |
| 45@10V | |
| 143@10V | |
| 143 | |
| 6420@100V | |
| 330000 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 mm |
| Verpackungsbreite | 5 mm |
| Verpackungslänge | 15.8 mm |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 4 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this STW69N65M5-4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 330000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology.
| EDA / CAD Models |
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