| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 8.2 | |
| 100 | |
| 1 | |
| 155@10V | |
| 12.5@10V | |
| 12.5 | |
| 450@25V | |
| 1700 | |
| 7 | |
| 14 | |
| 15 | |
| 5 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) |
| Verpackungsbreite | 6.22(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the SUD08P06-155L-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1700 mW. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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