| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 19 | |
| 90@10V | |
| 34@10V | |
| 34 | |
| 1800@25V | |
| 3000 | |
| 60 | |
| 50 | |
| 30 | |
| 15 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
This SUD19N20-90-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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