| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 50 | |
| 250 | |
| 1 | |
| 8.1@10V | |
| 60@4.5V|106@10V | |
| 106 | |
| 27 | |
| 22 | |
| 33 | |
| 5380@20V | |
| 500@20V | |
| 1 | |
| 570 | |
| 2500 | |
| 18 | |
| 12 | |
| 70 | |
| 15 | |
| -55 | |
| 150 | |
| 6.7@10V|9.7@4.5V | |
| 2.5 | |
| 100 | |
| 50 | |
| 0.8 | |
| 3.5 | |
| 35 | |
| 1.5 | |
| 0.4 | |
| 3.6 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 |
| Verpackungsbreite | 6.1 |
| Verpackungslänge | 6.54 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this SUD50P04-08-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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