| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 50 | |
| 100 | |
| 1 | |
| 15@10V | |
| 110@10V | |
| 110 | |
| 28 | |
| 19 | |
| 4950@25V | |
| 405@25V | |
| 1 | |
| 480 | |
| 2500 | |
| 175 | |
| 70 | |
| 175 | |
| 15 | |
| -55 | |
| 150 | |
| 12@10V | |
| 2.5 | |
| 80 | |
| 50 | |
| 1 | |
| 3.9 | |
| 45 | |
| 1.6 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 |
| Verpackungsbreite | 6.1 |
| Verpackungslänge | 6.54 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SUD50P06-15-GE3 power MOSFET is for you. Its maximum power dissipation is 2500 mW. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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