| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 110 | |
| 9.5@10V | |
| 110@10V | |
| 110 | |
| 6700@25V | |
| 3750 | |
| 130 | |
| 125 | |
| 55 | |
| 20 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.65(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
This SUM110N10-09-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3750 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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