| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 110 | |
| 4.2@10V | |
| 235@10V | |
| 235 | |
| 11200@25V | |
| 3750 | |
| 110 | |
| 30 | |
| 190 | |
| 25 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.45 |
| Verpackungsbreite | 9.14 |
| Verpackungslänge | 10.03 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this SUM110P04-04L-E3 power MOSFET from Vishay. Its maximum power dissipation is 3750 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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