| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 57 | |
| 100 | |
| 1 | |
| 33@10V | |
| 90@10V | |
| 90 | |
| 34 | |
| 23 | |
| 520 | |
| 5100@25V | |
| 210@25V | |
| 2 | |
| 480 | |
| 3750 | |
| 200 | |
| 220 | |
| 45 | |
| 24 | |
| -55 | |
| 175 | |
| 140 | |
| 1 | |
| 130 | |
| 1.5 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.65(Max) |
| Verpackungslänge | 10.51(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SUP57N20-33-E3 power MOSFET. Its maximum power dissipation is 3750 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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