| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 90 | |
| 6@10V | |
| 78.5@10V | |
| 78.5 | |
| 4700@30V | |
| 3750 | |
| 8 | |
| 10 | |
| 25 | |
| 16 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
This SUP90N06-6M0P-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3750 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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