| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 90 | |
| 100 | |
| 1 | |
| 9.3@10V | |
| 160@10V | |
| 160 | |
| 36 | |
| 40 | |
| 90 | |
| 9200@25V | |
| 760@25V | |
| 1 | |
| 975 | |
| 2400 | |
| 300 | |
| 190 | |
| 140 | |
| 20 | |
| -55 | |
| 175 | |
| 200 | |
| 1 | |
| 60 | |
| 1.5 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.65(Max) |
| Verpackungslänge | 10.51(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
This SUP90P06-09L-E3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2400 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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