| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single Quad Collector Triple Emitter | |
| ±6 | |
| 400 | |
| 3.8 | |
| 10 | |
| 1.2 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
This TIG067SS-TL-2W IGBT transistor from ON Semiconductor is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 400 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single quad collector triple emitter configuration.
| EDA / CAD Models |
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