onsemiTIP102GDarlington BJT
Trans Darlington NPN 100V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 20000@3A@4V | |
| 100 | |
| 4(Min) | |
| 100 | |
| 5 | |
| 8 | |
| 50 | |
| 1 | |
| -65 to 150 | |
| 4(Min) | |
| 2@6mA@3A|2.5@80mA@8A | |
| 1000@3A@4V|200@8A@4V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| <500|500 to 3600 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.9 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.1 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
The NPN TIP102G Darlington transistor from ON Semiconductor is the perfect solution when amplified current gain values are needed. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|200@8A@4V. It has a maximum collector emitter saturation voltage of 2@6mA@3A|2.5@80mA@8A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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