ToshibaTJ8S06M3L(T6L1,NQ)MOSFETs
Trans MOSFET P-CH Si 60V 8A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| 10 | |
| 3 | |
| 8 | |
| 10000 | |
| 10 | |
| 104@10V | |
| 19@10V | |
| 19 | |
| 890@10V | |
| 27000 | |
| 34 | |
| 6 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 5.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK+ |
| 3 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this TJ8S06M3L(T6L1,NQ) power MOSFET from Toshiba. Its maximum power dissipation is 27000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes u-mos vi technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.