ToshibaTK10A50D(STA4,Q,M)MOSFETs
Trans MOSFET N-CH Si 500V 10A 3-Pin(3+Tab) TO-220SIS
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 10 | |
| 720@10V | |
| 20@10V | |
| 20 | |
| 1050@25V | |
| 45000 | |
| 10 | |
| 25 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15 |
| Verpackungsbreite | 4.5 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220SIS |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the TK10A50D(STA4,Q,M) power MOSFET, developed by Toshiba. Its maximum power dissipation is 45000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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