| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 3.7 | |
| 11.5 | |
| 1000 | |
| 10 | |
| 300@10V | |
| 25@10V | |
| 25 | |
| 890@300V | |
| 110000 | |
| 5.5 | |
| 23 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.59 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
If you need to either amplify or switch between signals in your design, then Toshiba's TK12E60W,S1VX(S power MOSFET is for you. Its maximum power dissipation is 110000 mW. This device utilizes dtmosiv technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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