| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 3.7 | |
| 11.5 | |
| 1000 | |
| 10 | |
| 300@10V | |
| 25@10V | |
| 25 | |
| 890@300V | |
| 110000 | |
| 5.5 | |
| 23 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.59 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this TK12E60W,S1VX power MOSFET from Toshiba. Its maximum power dissipation is 110000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes dtmosiv technology.
| EDA / CAD Models |
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