| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 15 | |
| 400@10V | |
| 38@10V | |
| 38 | |
| 1800@25V | |
| 210000 | |
| 15 | |
| 40 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 19 mm |
| Verpackungsbreite | 4.5 mm |
| Verpackungslänge | 15.9(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3PN |
| 3 |
Compared to traditional transistors, TK15J50D(F) power MOSFETs, developed by Toshiba, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 210000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes pi-mos vii technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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