ToshibaTK18A50D(STA4,Q,M)MOSFETs
Trans MOSFET N-CH Si 500V 18A 3-Pin(3+Tab) TO-220SIS
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 18 | |
| 270@10V | |
| 45@10V | |
| 45 | |
| 2600@25V | |
| 50000 | |
| 25 | |
| 50 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15 |
| Verpackungsbreite | 4.5 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220SIS |
| 3 |
Thanks to Toshiba, both your amplification and switching needs can be taken care of with one component: the TK18A50D(STA4,Q,M) power MOSFET. Its maximum power dissipation is 50000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with pi-mos vii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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