ToshibaTK5A60D(STA4,Q,M)MOSFETs
Trans MOSFET N-CH Si 600V 5A 3-Pin(3+Tab) TO-220SIS
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 5 | |
| 1430@10V | |
| 16@10V | |
| 16 | |
| 700@25V | |
| 35000 | |
| 11 | |
| 20 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15 |
| Verpackungsbreite | 4.5 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220SIS |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the TK5A60D(STA4,Q,M) power MOSFET, developed by Toshiba. Its maximum power dissipation is 35000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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