ToshibaTLP7830(TL,EOptokoppler

3rd Generation Silicon Carbide (SiC) MOSFETs

Toshiba's 3rd generation 1200V Silicon Carbide (SiC) MOSFETs provide lower power consumption and support higher power density for applications such as off-board EV charging stations. The devices include a built-in SiC Schottky Barrier Diode (SBD), with a low forward voltage (VF) of -1.35V (typ.), to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process has greatly improved on-resistance per unit area RonA as well as performance index Ron*Qgd.

Features and Benefits

• •  Chip design of 3rd generation (Built-in SiC Schottky barrier diode)
• •  Low diode forward voltage: VDSF = -1.35 V (typ.)
• •  High voltage: VDSS = 1200 V
• •  Low drain-source on-resistance: RDS(ON) = 15 m Ω (typ.)
• •  Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0 V (VDS = 10 V, I D = 11.7 mA)
• •  Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V

Applications

• •  Automotive EV off-board charging stations
• •  Switching power supplies (servers, data servers, communications equipment, etc.)
• •  Photovoltaic inverters
• •  Uninterruptible power supplies (UPS)

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