Microchip TechnologyTN5335K1-GMOSFETs
Trans MOSFET N-CH Si 350V 0.11A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 350 | |
| ±20 | |
| 2 | |
| 0.11 | |
| 100 | |
| 10 | |
| 15000@10V | |
| 110(Max)@25V | |
| 360 | |
| 25(Max) | |
| 15(Max) | |
| 25(Max) | |
| 20(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this TN5335K1-G power MOSFET from Microchip Technology. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.