| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 0.185 | |
| 10000 | |
| 0.025 | |
| 6000@10V | |
| 1.7@15V | |
| 0.46 | |
| 0.26 | |
| 23@25V | |
| 5@25V | |
| 1 | |
| 10 | |
| 350 | |
| 35 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3900@6V|3000@8V|2900@10V | |
| 0.35 | |
| 0.8 | |
| 350 | |
| 4 | |
| 1.4 | |
| 20 | |
| 0.185 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.92 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the TP0610K-T1-GE3 power MOSFET. Its maximum power dissipation is 350 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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