Microchip TechnologyTP2522N8-GMOSFETs
Trans MOSFET P-CH Si 220V 0.26A 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 220 | |
| ±20 | |
| 0.26 | |
| 12000@10V | |
| 75@25V | |
| 1600 | |
| 15(Max) | |
| 15(Max) | |
| 20(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6(Max) mm |
| Verpackungsbreite | 2.6(Max) mm |
| Verpackungslänge | 4.6(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Make an effective common gate amplifier using this TP2522N8-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1600 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.