| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 5.5 | |
| 40@4.5V | |
| 10@5V | |
| 700@10V | |
| 2200 | |
| 30 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.7 mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | VS |
| 6 |
Increase the current or voltage in your circuit with this TPC6111(TE85L,F,M) power MOSFET from Toshiba. Its maximum power dissipation is 2200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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