| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| 20 | |
| 2 | |
| 18 | |
| 100 | |
| 10 | |
| 3.2@10V | |
| 180@10V | |
| 180 | |
| 7420@10V | |
| 1900 | |
| 275 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 5.5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOP |
| 8 | |
| Leitungsform | Gull-wing |
This TPC8120(TE12L,V,M) power MOSFET from Toshiba can be used for amplification in your circuit. Its maximum power dissipation is 1900 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes u-mos vi technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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