| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 4 | |
| 50@10V@N Channel|72@10V@P Channel | |
| 14@10V | |
| 14 | |
| 600@10V | |
| 1350 | |
| 4 | |
| 5.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.8 mm |
| Verpackungsbreite | 1.5 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | VS |
| 8 |
Increase the current or voltage in your circuit with this TPCF8402(TE85L,F,M power MOSFET from Toshiba. Its maximum power dissipation is 1350 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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