| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 15 | |
| 2 | |
| 1.5 | |
| 2.3 | |
| 90(Typ)@10V | |
| 11.25@10V | |
| 11.25 | |
| 2.6 | |
| 1.5 | |
| 791 | |
| 13 | |
| 5.5 | |
| 19 | |
| 6.5 | |
| -40 | |
| 125 | |
| Tube | |
| 90@10V|134@4.5V|198@3V|232@2.7V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) mm |
| Verpackungsbreite | 3.98(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this TPS1101D power MOSFET from Texas Instruments. Its maximum power dissipation is 791 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 125 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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