| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 15 | |
| 2 | |
| 1.17 | |
| 400@4.5V | |
| 5.45@10V | |
| 5.45 | |
| 840 | |
| 2 | |
| 10 | |
| 13 | |
| 4.5 | |
| -40 | |
| 125 | |
| Tube | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5(Max) |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.91 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The TPS1120D power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 840 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.