| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 160 | |
| 160 | |
| 5 | |
| 2@0.9A@9A | |
| 18 | |
| 80@1A@5V|35@9A@5V | |
| 180000 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 20 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3PL |
| 3 | |
| Leitungsform | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN TTC0002(Q) GP BJT from Toshiba. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 180000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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