| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Non-Inverting | |
| 2 | |
| IGBT|MOSFET | |
| 2 | |
| 40 | |
| 40 | |
| 35 | |
| CMOS|TTL | |
| 4.5 | |
| 15 | |
| 0.75 | |
| 1.2 | |
| 2.2 | |
| 4 | |
| 2.2|30 | |
| 780 | |
| -40 | |
| 125 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.08(Max) - 0.51(Min) |
| Verpackungsbreite | 6.35 |
| Verpackungslänge | 9.59 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | PDIP |
| 8 | |
| Leitungsform | Through Hole |
Turn on and off high power transistors by implementing this UCC27324P power driver manufactured by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 780 mW. Its maximum power dissipation is 780 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.
| EDA / CAD Models |
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