| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| Low Side | |
| Inverting|Non-Inverting | |
| 1 | |
| GaNFET|IGBT|MOSFET | |
| 1 | |
| 22 | |
| 11 | |
| 30 | |
| CMOS|TTL | |
| 4.5 | |
| 12 | |
| 18 | |
| 1.2 | |
| 2.2 | |
| 8(Typ) | |
| 0.45|5 | |
| -40 | |
| 140 | |
| Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 |
| Verpackungsbreite | 3 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | WSON EP |
| 6 | |
| Leitungsform | No Lead |
Change state in a high power transistor by implementing this UCC27512DRSR power driver by Texas Instruments. Its typical operating supply voltage is 12 V. This device has a maximum propagation delay time of 30 ns. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device has a typical operating supply voltage of 12 V. Its minimum operating supply voltage of 4.5 V, while its maximum is 18 V. This gate driver has a minimum operating temperature of -40 °C and a maximum of 140 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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