STMicroelectronicsULN2065BDarlington BJT
Trans Darlington NPN 80V 1.75A 4300mW 16-Pin Power PDIP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Quad | |
| 4 | |
| 80 | |
| 1.75 | |
| 1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A | |
| 4300 | |
| -20 | |
| 85 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.1(Max) - 0.51(Min) |
| Verpackungsbreite | 7.1(Max) |
| Verpackungslänge | 20(Max) |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | Power PDIP |
| 16 | |
| Leitungsform | Through Hole |
STMicroelectronics' NPN ULN2065B Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This product's maximum continuous DC collector current is 1.75 A. It has a maximum collector emitter saturation voltage of 1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V. Its maximum power dissipation is 4300 mW. It has a maximum collector emitter voltage of 80 V. This Darlington transistor array has a minimum operating temperature of -20 °C and a maximum of 85 °C.
| EDA / CAD Models |
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