Microchip TechnologyVN0104N3-GMOSFETs
Trans MOSFET N-CH Si 40V 0.35A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.4 | |
| 0.35 | |
| 3000@10V | |
| 55@25V | |
| 20 | |
| 1000 | |
| 5 | |
| 5 | |
| 6 | |
| 3 | |
| -55 | |
| 150 | |
| Bag | |
| 2500@10V|3000@5V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) mm |
| Verpackungsbreite | 4.19(Max) mm |
| Verpackungslänge | 5.21(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Make an effective common source amplifier using this VN0104N3-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.