Microchip TechnologyVN0300L-GMOSFETs
Trans MOSFET N-CH Si 30V 0.64A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±30 | |
| 2.5 | |
| 0.64 | |
| 100 | |
| 10 | |
| 1200@10V | |
| 50(Max)@20V | |
| 0.8 | |
| 110(Max) | |
| 1000 | |
| -55 | |
| 150 | |
| Bag | |
| 30 | |
| 3 | |
| 0.9 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Create an effective common drain amplifier using this VN0300L-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.