| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±30 | |
| 0.3 | |
| 4000@10V | |
| 50(Max)@25V | |
| 1000 | |
| -55 | |
| 150 | |
| Bag | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
If you need to either amplify or switch between signals in your design, then Microchip Technology's VN0808L-G power MOSFET is for you. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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