Microchip TechnologyVN10KN3-GMOSFETs
Trans MOSFET N-CH Si 60V 0.31A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±30 | |
| 2.5 | |
| 0.31 | |
| 5000@10V | |
| 48@25V | |
| 16 | |
| 1000 | |
| -55 | |
| 150 | |
| Bag | |
| 4000@10V|100000@1V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Create an effective common drain amplifier using this VN10KN3-G power MOSFET from Microchip Technology. Its maximum power dissipation is 1000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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