| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1700 | |
| ±30 | |
| 3 | |
| 100 | |
| 1 | |
| 10500@10V | |
| 48@10V | |
| 48 | |
| 850@30V | |
| 3000 | |
| 55 | |
| 21 | |
| 200 | |
| 19 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 26.9(Max) |
| Verpackungsbreite | 5.7(Max) |
| Verpackungslänge | 15.7(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3PF |
| 3 |
Create an effective common drain amplifier using this WPH4003-1E power MOSFET from ON Semiconductor. Its maximum power dissipation is 3000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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